MJE3055T discrete semiconductors r dc components co., ltd. technical specifications of npn epitaxial planar transistor to-220ab dimensions in inches and (millimeters) .625(15.87).570(14.48) .562(14.27).500(12.70) .055(1.39).045(1.15) .185(4.70).173(4.40) .405(10.28) .380(9.66) .295(7.49).220(5.58) .350(8.90).330(8.38) .640 (16.25) typ .055(1.40).045(1.14) .037(0.95).030(0.75) .100 (2.54) typ .024(0.60).014(0.35) f.151 f(3.83) typ 1 2 3 pinning 1 = base 2 = collector 3 = emitter description designed for general purpose amplifier and switching applications. characteristic symbol min typ max unit test conditions collector-base breakdown volatge bvcbo 70 - - v ic=10ma, ie=0 collector-emitter breakdown voltage bvceo 60 - - v ic=200ma, ib=0 emitter-base breakdown voltage bvebo 5 - - v ie=10ma, ic=0 icbo - - 1 ma vcb =70v, ie=0 collector cutoff current icex - - 1 ma vce =70v, v eb(off)=1.5v iceo - - 0.7 ma vce =30v, ib=0 emitter cutoff current iebo - - 5 ma veb =5v, ic=0 collector-emitter saturation voltage (1) vce(sat)1 - - 1.1 v ic=4a, ib=400ma vce(sat)2 - - 8 v ic=10a, ib=3.3a base-emitter on voltage (1) vbe(on) - - 1.8 v ic=4a, vce=4v dc current gain(1) hfe1 20 - 100 - ic=4a, vce=4v hfe2 5 - - - ic=10a, vce=4v transition frequency ft 2 - - mhz ic=500ma, vce =10v, f=0.5mhz electrical characteristics(ratings at 25 oc ambient temperature unless otherwise specified) (1)pulse test: pulse width 380ms, duty cycle 2% characteristic symbol rating unit collector-base voltage vcbo 70 v collector-emitter voltage vceo 60 v emitter-base voltage vebo 5 v collector current ic 10 a base current ib 6 a total power dissipation(t c=25oc) pd 75 w junction temperature tj +150 oc storage temperature tstg -55 to +150 oc absolute maximum ratings(ta=25oc)
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